The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures |
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| Authors: | Seredin P V Gordienko N N Glotov A V Zhurbina I A Domashevskaya E P Arsent’ev I N Shishkov M V |
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| Affiliation: | (1) Voronezh State Technical University, Voronezh, 394006, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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| Abstract: | Semiconductors - In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate... |
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