Structural and optical properties of InAs quantum dots in AlGaAs matrix |
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Authors: | D S Sizov Yu B Samsonenko G E Tsyrlin N K Polyakov V A Egorov A A Tonkikh A E Zhukov S S Mikhrin A P Vasil’ev Yu G Musikhin A F Tsatsul’nikov V M Ustinov N N Ledentsov |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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Abstract: | Structural and optical properties of InAs quantum dots (QDs) grown in a wide-bandgap Al0.3Ga0.7As matrix is studied. It is shown that a high temperature stability of optical properties can be achieved owing to deep localization of carriers in a matrix whose band gap is wider than that in GaAs. Specific features of QD formation were studied for different amounts of deposited InAs. A steady red shift of the QD emission peak as far as ~1.18 µm with the effective thickness of InAs in Al0.3Ga0.7As increasing was observed at room temperature. This made it possible to achieve a much higher energy of exciton localization than for QDs in a GaAs matrix. To obtain the maximum localization energy, the QD sheet was overgrown with an InGaAs layer. The possibility of reaching the emission wavelength of ~1.3 µm is demonstrated. |
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