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GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow |
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| Authors: | Maidebura Y E Malin T V Zhuravlev K S |
| Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ; |
| Abstract: | Semiconductors - The transformation of a two-dimensional GaN layer into three-dimensional islands (2D–3D transition) under increasing temperature in a flow of ammonia is investigated... |
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