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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs |
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| Authors: | Bochkareva N I Ivanov A M Klochkov A V Kogotkov V S Rebane Yu T Virko M V Shreter Y G |
| Affiliation: | 1.Ioffe Physical-Technical Institute Russian Academy of Sciences, St. Petersburg, 194021, Russia ;2.St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia ; |
| Abstract: | Semiconductors - It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode... |
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