Role of surface segregation in formation of abrupt interfaces in Si/Si1−x Gex heterocompositions grown by molecular-beam epitaxy with combined sources

The coefficients of segregation of germanium atoms were measured for the Si_1?x Ge_x system grown by molecular-beam epitaxy with combined Si-GeH₄ sources under the conditions of efficient filling of surface bonds by the products of the decomposition of hydrides. In their turn, these measurements made it possible to determine for the first time the ratio between the coefficients of the incorporation of Si and Ge atoms into the growing Si_1?x Ge_x layer using the developed kinetic model of growth. For the Si-Si_1?x Ge_x structures grown by molecular-beam epitaxy with the Si-GeH₄ combined sources, the role of various mechanisms (pyrolysis, segregation, etc.) in the formation of the profile of metallurgical layer interfaces was compared for a wide range of technological parameters.