| 摘 要： | Semiconductor heterostructures with vertical optical cavities with active regions, based on arrays of InAs quantum dots inserted
in an external InGaAs quantum well, have been obtained by molecular-beam epitaxy on GaAs substrates. The dependences of the
reflection and photoluminescence spectra on the structural characteristics of the active region and optical cavities have
been investigated. The proposed heterostructures are potentially suitable for optoelectronic devices at wavelengths near 1.3
μm.
Fiz. Tekh. Poluprovodn. 33, 629–633 (May 1999)
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