Mechanism of copper diffusion over the Si(110) surface |
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| Authors: | A. E. Dolbak R. A. Zhachuk B. Z. Olshanetsky |
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| Affiliation: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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| Abstract: | The mechanism of Cu diffusion over a clean Si(110) surface was studied by Auger electron spectroscopy and low-energy electron diffraction in the temperature range from 500 to 650°C. It is shown that the Cu transport over the Si(110) surface proceeds by Cu atom diffusion through the Si bulk and Cu atom segregation at the surface during diffusion. The temperature dependence of the effective Cu diffusivities at the clean Si(110) surface was found. The results were compared to those previously found for a Si(111) surface. |
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