| 二氧化钒薄膜的退火组分变化及光学特性研究 |
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| 引用本文： | 田雪松,刘金成,掌蕴东,鲁建业,王骐.二氧化钒薄膜的退火组分变化及光学特性研究[J].激光技术,2005,29(3):332-333,336. |
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| 作者姓名： | 田雪松 刘金成 掌蕴东 鲁建业 王骐 |
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| 作者单位： | 1.哈尔滨工业大学, 光电子技术研究所, 哈尔滨, 150001 |
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| 摘 要： | 为得到高纯度的VO2薄膜,对其制备参数进行了探索。VO2薄膜用磁控溅射法制备。对不同条件下制备的VO2薄膜用X射线电子能谱仪(XPS)测试,并通过拟合来得到3,4,5价钒在薄膜中所占的比例。为提高4价钒的含量对薄膜进行了退火处理,分析了退火对氧化钒薄膜中4价钒含量的影响。结果表明,VO2薄膜对10.6μm激光的透过率从60℃时的74%变到78℃时的11.93%,发生了相变。
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| 关 键 词： | 激光防护 相变 磁控溅射 二氧化钒 |
| 文章编号： | 1001-3806(2005)03-0332-02 |
| 收稿时间： | 2004/3/30 |
| 修稿时间： | 2004-06-04 |
Appealing component changes and optical properties of VO2 thin films |
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| TIAN Xue-song,LIU Jin-cheng,ZHANG Yun-dong,LU Jian-ye,WANG Qi.Appealing component changes and optical properties of VO2 thin films[J].Laser Technology,2005,29(3):332-333,336. |
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| Authors: | TIAN Xue-song LIU Jin-cheng ZHANG Yun-dong LU Jian-ye WANG Qi |
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| Abstract: | Preperation parameters are studied to get highly pure vanadium dioxide thin films.VO2 thin films are deposited by magnetron sputtering methods.VO2 thin films prepared in different conditions are studied by means of X-ray photoelectron spectroscopy (XPS), constituents of the VO3+,VO4+ and VO5+ in the film are gotten by fitting the XPS peaks with 100% Guassian like curves.Then the thin films are annealed to increase the percentages of the VO4+, the effect of annealing is analyzed.The transmittance at 10.6 μm changed from 74% at 60℃ to 11.93% at 74℃, semiconductor-to-metal phase transition occurs. |
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| Keywords: | laser protection phase transition magnetron s puttering vanadium dioxide |
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