激光化学气相沉积石墨烯的基底温度场仿真

为了分析激光化学气相沉积制备石墨烯过程中催化剂基底的静态和动态温度场分布与各个实验参量之间的关系,采用基于ANSYS软件建立有限元分析模型和加载532nm激光热源模型的方法,取得了不同实验参量影响下基底温度场分布和达到反应温度所需时间的数据。结果表明,在基底材料属性、激光功率大小、基底面积尺寸、聚焦光斑直径、反应气体流量的影响下,基底静态温度场的分布与达到反应温度所需时间均不同,可作为制备高质量石墨烯实验的参考依据。采用波长为532nm、功率为3W、聚焦光斑直径为50m、移动速率为1mm/s的连续型激光器,以镍箔为基底材料,在标准状态下甲烷和氢气流量分别为10mL/min和5mL/min条件下仿真得到的动态温度场符合激光化学气相沉积法制备图案化石墨烯的生长机理。

Simulation of temperature field of graphene substrate fabricated by laser chemical vapor deposition

In order to analyze the relationship between static and dynamic temperature field distribution of catalyst substrate and various experimental parameters in graphene fabrication with laser-induced chemical vapor deposition, the finite element model was established by using ANSYS software and 532nm laser model was loaded as the heat source. The data of temperature field distribution and the needing time for achieving reaction temperature under different parameters were obtained. The results show that under the influence of the property of substrate, laser power, the size of substrate area, the focus spot diameter and the reaction gas flow, the substrate temperature field distribution and the needing time for achieving reaction temperature are different. It can be used as the reference in high quality graphene fabrication experiment. The dynamic temperature field distribution under the conditions of continuous wave laser(wavelength of 532nm, power of 3W, focused spot diameter of 50m, movement speed of 1mm/s), nickel foil substrate, 10mL/min methane and 5mL/min hydrogen conforms to the pattern graphene growth mechanism fabricated by laser chemical vapor deposition.