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DESIGN AND IMPLEMENTATION OF CMOS IMAGE SENSOR
引用本文:Liu Yu Wang Guoyu (School of Electronic and Info. Eng.,Xi’an Jiaotong Univ.,Xi’an 710049,China). DESIGN AND IMPLEMENTATION OF CMOS IMAGE SENSOR[J]. 电子科学学刊(英文版), 2007, 24(1): 95-99. DOI: 10.1007/s11767-005-0121-y
作者姓名:Liu Yu Wang Guoyu (School of Electronic and Info. Eng.  Xi’an Jiaotong Univ.  Xi’an 710049  China)
作者单位:School of Electronic and Info. Eng.,Xi’an Jiaotong Univ.,Xi’an 710049,China
摘    要:I. Introduction Complementary Metal Oxide Semiconductor (CMOS) image sensor has been becoming in-creasingly significant in the field of solid image sensor. Compared with Charge-Coupled Device (CCD) image sensor, CMOS image sensor possesses many advantages, such as smaller size, more con-venient to be integrated with other devices, lower power consumption and cost, etc[1,2]. To date, CMOS image sensor is adopted in almost all mo-biles which can take pictures. In addition, CMOS image …

关 键 词:互补金属氧化物半导体 CMOS 图象传感器 设计 实现 活动像素传感器
收稿时间:2005-06-11
修稿时间:2005-08-30

Design and implementation of CMOS image sensor
Liu Yu,Wang Guoyu. Design and implementation of CMOS image sensor[J]. Journal of Electronics, 2007, 24(1): 95-99. DOI: 10.1007/s11767-005-0121-y
Authors:Liu Yu  Wang Guoyu
Affiliation:(1) School of Electronic and Info. Eng., Xi’an Jiaotong Univ., Xi’an, 710049, China
Abstract:A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel architecture of Active Pixel Sensor (APS) is used in the chip, which comprises a 256×256 pixel array together with column amplifiers, scan array circuits, series interface, control logic and Analog-Digital Converter (ADC). With the use of smart layout design, fill factor of pixel cell is 43%. Moreover, a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.
Keywords:Complementary Metal Oxide Semiconductor (CMOS)  Active Pixel Sensor (APS)  Fill factor  Dynamic Digital Double Sample (DDDS)  Fixed Pattern Noise (FPN)
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