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| THE PRINCIPLE OF DESIGN FOR DOUBLE INJECTION Ge MAGNETO-DIODE | |
| 作者姓名： | 黄得星 |
| 作者单位： | Department of |
| 摘 要： | design principle is propose for long.P~+IN~+Ge magneto-diode with a high surface recombinationregion on one side.The optimal relation is established for design among its length l,depth d,width wand resistivity p:where ⊿T is the maximum permissible temperature rise of the chip,R_(th)the thermal resistance of theheader,I_o the forward current of the diode. |
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