AlGaN/GaN high electron mobility transistors with InGaN back-barriers |
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Authors: | Palacios T Chakraborty A Heikman S Keller S DenBaars SP Mishra UK |
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Affiliation: | Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA; |
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Abstract: | A GaN/ultrathin InGaN/GaN heterojunction has been used to provide a back-barrier to the electrons in an AlGaN/GaN high-electron mobility transistor (HEMT). The polarization-induced electric fields in the InGaN layer raise the conduction band in the GaN buffer with respect to the GaN channel, increasing the confinement of the two-dimensional electron gas under high electric field conditions. The enhanced confinement is especially useful in deep-submicrometer devices where an important improvement in the pinchoff and 50% increase in the output resistance have been observed. These devices also showed excellent high-frequency performance, with a current gain cut-off frequency (f/sub T/) of 153 GHz and power gain cut-off frequency (f/sub max/) of 198 GHz for a gate length of 100 nm. At a different bias, a record f/sub max/ of 230 GHz was obtained. |
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