Characteristics of HfO/sub 2/ pMOSFET prepared by B/sub 2/H/sub 6/ plasma doping and KrF excimer laser annealing |
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Authors: | Sungkweon Baek Sungho Heo Haejung Choi Hyunsang Hwang |
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Affiliation: | Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., South Korea; |
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Abstract: | The electrical characteristics of HfO/sub 2/ pMOSFETs prepared by B/sub 2/H/sub 6/ plasma doping and excimer laser annealing were investigated. Various metal gate electrodes were evaluated to protect the high-/spl kappa/ oxide during laser irradiation. Although the aluminum gate electrode showed superior reflectivity to the laser, the equivalent oxide thickness was increased due to the interaction between aluminum and HfO/sub 2/, which resulted in reduced capacitance. In contrast, the Al-TaN stacked gate showed good reflectivity up to laser energy of 500 mJ/cm/sup 2/ and improved capacitance was obtained compared with the Al gate. For the first time, the electrical characteristics of a HfO/sub 2/ pMOSFET with an Al-TaN gate fabricated by plasma doping and excimer laser annealing were demonstrated. It was also demonstrated that plasma doping and excimer laser annealing combined with a metal gate could be applied for high-/spl kappa/ oxide MOSFET fabrication. |
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