Se-doped AlGaAs/GaAs HEMTs for stable low-temperature operation

The fabrication of Se-doped AlGaAs/GaAs high electron mobility transistors (HEMTs) is discussed. Because the DX center concentration in Se-doped AlGaAs layers is lower than in Si-doped layers, the drain-current collapses much less at 77 K. The Se-doped HEMTs are therefore suitable for application in low-temperature LSI