Low ballistic mobility in submicron HEMTs |
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Authors: | Shur MS |
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Affiliation: | Dept. of Phys., Rensselaer Polytech. Inst., Troy, NY; |
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Abstract: | Ballistic effects in short channel high electron mobility transistors (HEMTs) greatly reduce the field effect mobility compared to that in long gate structures. This reduction is related to a finite electron acceleration time in the channel under the device gate. As an example, the field effect mobility at room temperature in 0.15-μm gate AlGaAs/GaAs HEMTs cannot exceed 3000 cm2/V-s. These predictions are consistent with the values of the field effect mobility extracted from the measured AlGaAs/GaAs HEMT current-voltage characteristics |
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