p-channel modulation-doped field-effect transistors based on AlSb0.9As0.1/GaSb |
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Authors: | Luo LF Longenbach KF Wang WI |
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Affiliation: | Dept. of Electr. Eng., Columbia Univ., New York, NY; |
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Abstract: | Operation of the first AlSbAs/GaSb p-channel modulation-doped field-effect transistor (MODFET) is reported. Devices with 1-μm gate length exhibit transconductance of 30 and 110 mS/mm at room temperature and 80 K, with respective maximum drain current densities of 25 and 80 mA/mm. The low field Hall mobility and sheet carrier density of this modulation doped structure were 260 cm2/V-s and 1.8×10 12 cm-2 at room temperature and 1700 cm2/V-s and 1.4×1012 cm-2 at 77 K. Calculations based on these results indicate that room-temperature transconductances of 200 mS/mm or greater could be achieved. This device can be integrated with an InAs n-channel HFET for complementary circuit applications |
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