Modeling boron diffusion in thin-oxide p+ Si gatetechnology

A network defect model suitable for use in process simulation is presented for the diffusion of B in SiO₂ and, in particular, B in the presence of F and H₂. We find that B diffuses via a peroxy linkage defect the concentration in the oxide of which changes under different processing conditions. From random walk theory it is possible then to calculate the resulting diffusion coefficients. These results are compared with measured diffusivities and empirical adjustments are made