| 0.6V电源电压的CMOS基准源设计及稳定性分析 |
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| 引用本文： | 王晗,叶青. 0.6V电源电压的CMOS基准源设计及稳定性分析[J]. 半导体学报, 2006, 27(8): 1508-1513 |
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| 作者姓名： | 王晗 叶青 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 在SMIC 0.18μm CMOS工艺下实现了一种工作在0.6～1.5V下的基准源.分别采用环路增益法和返回比法对其中的自偏置放大器和核心电路的环路特性进行了分析.芯片输出的基准电压为0.4V,工作电流为4.8μA,在-40～120℃范围内温度系数小于80ppm/℃,面积(不包括PAD)为0.045mm2.
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| 关 键 词： | 基准源 超低电压 自偏置 稳定性 环路增益 返回比 |
| 收稿时间： | 2015-08-20 |
Design and Stability Analysis of a 0. 6V Supply CMOS Voltage Reference |
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| Wang Han, Ye Qing. Design and Stability Analysis of a 0.6V Supply CMOS Voltage Reference[J]. Journal of Semiconductors, 2006, In Press. Wang H, Ye Q. Design and Stability Analysis of a 0.6V Supply CMOS Voltage Reference[J]. Chin. J. Semicond., 2006, 27(8): 1508.Export: BibTex EndNote |
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| Authors: | Wang Han Ye Qing |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100030,China |
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| Abstract: | An ultra-low power CMOS voltage reference circuit is presented.To find the loop parameters of the op-amp and the core circuit,different techniques called loop gain and return ratio are applied,respectively.Fabricated in an SMIC 0.18μ CMOS process,the chip generates a reference voltage of 0.4V in a power supply range of 0.6～1.5V with a maximum temperature coefficient of 80ppm/℃.The total current is 4.8μA and the chip area (not including the PAD) is 0.045mm2. |
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| Keywords: | voltage reference ultra-low supply stability loop gain return ratio |
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