| 肖特基二极管(SBD)结构解剖与分析 |
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| 引用本文： | 陈明华,成巨华.肖特基二极管(SBD)结构解剖与分析[J].微电子技术,1999(4). |
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| 作者姓名： | 陈明华 成巨华 |
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| 作者单位： | 中国华晶电子集团公司技术支援中心!无锡，214061，中国华晶电子集团公司技术支援中心!无锡，214061 |
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| 摘 要： | 本文对四个不同电流容量的进口SBD管芯进行纵向结构的解剖与分析。阐述了金属-半导体表面势垒、多层金属（或合金）的元素、厚度及合金的成份比等。为研制SBD管器件提供了参考。
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| 关 键 词： | 肖特基二极管 表面势垒 费米能级 |
The Structural Dissection and Analysis of Schottky Barrier Diode (SBD) |
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| Chen Minghua, Cheng Juhua.The Structural Dissection and Analysis of Schottky Barrier Diode (SBD)[J].Microelectronic Technology,1999(4). |
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| Authors: | Chen Minghua Cheng Juhua |
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| Abstract: | This article describes the constituent elements, their respective thickness andalloying raho in the metal - semiconductor surface barrier and the multilayer metals (or al-loy) based on the longitudinal structural dissection and analsis of four imported SBD chipsof different current capacity ratings, serving as a refermce for the development of new SBDdivices. |
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| Keywords: | Schottky Barrier Diode Surface barrier Fermi-level |
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