| 新型不挥发非破坏性读出铁电存储器(MFS) |
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| 引用本文： | 颜雷,黄维宁,姜国宝,汤庭鳌. 新型不挥发非破坏性读出铁电存储器(MFS)[J]. 微电子技术, 1998, 0(3) |
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| 作者姓名： | 颜雷 黄维宁 姜国宝 汤庭鳌 |
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| 作者单位： | 上海复旦大学电子工程系微电子研究室!上海，200433 |
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| 摘 要： | 长期以来，人们认为铁电场效应管是单晶体管、不挥发、非破坏性读出存储器的基本结构。铁电场效应管的基本结构为金属／铁电／半导体（MFS）结构。MFS存储器与其它不挥发性存储器相比在数据传输速率、疲劳特性和工作电压等方面有更大的优点。本论文简单地论述了MFS存储器的结构、工作原理和制备方法。
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| 关 键 词： | 铁电存储器 电滞回线 FRAM 阈值电压窗口 |
New Type Nonvoaltile Non-Destructive-Read-Out Ferroelectric Memory(MFS) |
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| Yan Lei ,Huang Weining ,Jiang Guobao, Tang Tingao. New Type Nonvoaltile Non-Destructive-Read-Out Ferroelectric Memory(MFS)[J]. Microelectronic Technology, 1998, 0(3) |
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| Authors: | Yan Lei Huang Weining Jiang Guobao Tang Tingao |
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| Abstract: | A ferroelectric FET has for a long time been considered to be the basic block of the one transistor, nonvolatile, and Non - Destructive - Read - out memory- Metal/Ferroelectric/Semiconductor is the conventional ferroelectric FET. It has much more superior characteristic than that of other nonvolatile memories and so forth in terms of data transfer rate, fatigue characteristic, operating voltage etc. The structure, the operation theory and the fabrication of MFS memory were briefey discussed in the paper. |
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| Keywords: | Ferroelectric Memory Ferroelectric Hystersis Ferroelectric Random Access Memory Programming Windows |
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