A W-band subharmonically pumped monolithic GaAs-based HEMT gate mixer |
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| Authors: | Yuh-Jing Hwang Huei Wang Tah-Hsiung Chu |
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| Affiliation: | Graduate Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan; |
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| Abstract: | A W-band high electron mobility transistor (HEMT) subharmonically pumped (SHP) gate mixer is designed with fixed LO frequency operation. it is fabricated on a 4-mil substrate using 0.15-/spl mu/m GaAs pHEMT monolithic microwave integrated circuit (MMIC) process. the on-wafer measurement results show that the best conversion loss is about 4.7 dB in the W-band, as a 11-dbm 42-GHz low observable (LO) signal is pumped. To our knowledge, this is the first result on low conversion-loss W-band MMIC SHP HEMT gate mixer. |
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