高阻硅基GaN晶片上MIS栅结构GaN HEMT射频器件研制

5G 通信中3. 4~3. 6 GHz 是主要使用频段。GaN 射频器件由于高频、低功耗、高线性度等优势,满足5G 通信应用需求。文中在高阻硅基GaN 外延片上研制了AlGaN/GaN 高电子迁移率晶体管(High Electron Mobility Transistor, HEMT),并分析了金属鄄绝缘层鄄半导体(Metal-Insulator-Semiconductor,MIS)栅对器件直流和射频特性的影响。研究发现:相比于肖特基栅结构,MIS 栅结构器件栅极泄漏电流减少2~5 个数量级,漏极驱动电流能力和跨导提高10%以上;频率为3. 5 GHz 时,增益从1. 5 dB 提升到4. 0 dB,最大资用增益从5. 2 dB 提升到11. 0 dB,电流增益截止频率为8. 3 GHz,最高振荡频率为10. 0 GHz。

Research of MIS Gate GaN HEMT RF Devices on GaN Epitaxially-grown on High Resistance Si Substrate

For 5G communication, 3. 4-3. 6 GHz frequency band is the main frequency band. Due to high frequency and low power consumption, GaN RF devices have become an alternative product to meet the requirements. In this paper, AlGaN/ GaN HEMTs are fabricated on GaN epitaxial layer on high resistance Si substrate, and metal-insulator-semiconductor (MIS) gates are explored. Compared with Schottky gate, the gate leakage current reduces 2-5 orders of magnitude, the drain driving current and transconductance increases more than 10%, the gain increases from 1. 5 dB to 4. 0 dB and the maximum available gain increases from 5. 2 dB to 11. 0 dB at the frequency of 3. 5 GHz. The current gain cutoff frequency of MIS gate devices is 8. 3 GHz, and the maximum oscillation frequency is 10. 0 GHz.