| SiC宽禁带功率器件在雷达发射机中的应用分析 |
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| 引用本文： | 余振坤,郑新. SiC宽禁带功率器件在雷达发射机中的应用分析[J]. 微波学报, 2007, 23(3): 61-65 |
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| 作者姓名： | 余振坤 郑新 |
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| 作者单位： | 南京电子技术研究所,南京,210013 |
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| 摘 要： | 介绍了SiC宽禁带半导体材料的特性,通过与Si和GaAs半导体相比较,该材料在击穿电场强度、截止频率、热传导率、抗辐射能力、结温和热稳定性等方面具有显著优点。SiC宽禁带功率器件,尤其在输出功率、功率密度、工作频率、工作带宽、环境适应性和总效率等方面具有卓越的性能,在雷达发射机中有良好的应用前景。文章还详细论述了现代雷达对SiC功率器件的具体指标要求。
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| 关 键 词： | 宽禁带半导体 碳化硅功率器件 雷达发射机 |
| 文章编号： | 1005-6122（2007）03-0061-05 |
| 收稿时间： | 2007-01-12 |
| 修稿时间： | 2007-01-12 |
The Application Analysis of SiC Power Devices in Radar Transmitter |
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| YU Zhen-kun,ZHENG Xin. The Application Analysis of SiC Power Devices in Radar Transmitter[J]. Journal of Microwaves, 2007, 23(3): 61-65 |
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| Authors: | YU Zhen-kun ZHENG Xin |
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| Affiliation: | Nanjing Research Institute of Electronics Technology, Nanjing 210013, China |
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| Abstract: | The feature of SiC WBG semiconductor is introduced.Compared with Si and GaAs semiconductor,it has remarkable advantages in breakdown electric-field intensity,cutoff frequency,heat conduction rate,anti-radiation,junction temperature and thermal stability,and so on.The prospect of SiC WBG power devices being used in radar transmitter is analyzed in this paper,especially SiC WBG power devices have excellent performance in output power,power density,operating frequency,operating bandwidth,environment adaptability and total efficiency,etc.The specification reqiured by modern radar on SiC power devices is analyzed in detail. |
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| Keywords: | WBG(Wide Bandgap) semiconductor SiC power devices Radar transmitter |
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