基于高阻硅的毫米波IPD 滤波器研究

5G 通信迫切需要毫米波集成无源器件(Integrated Passive Device,IPD),要求该类器件低成本、高性能。基于高阻硅(High Resistivity Silicon, HRS)工艺设计并加工了一款四阶交叉耦合毫米波微带滤波器,基于测试结果和有耗耦合矩阵理论反提取得到四阶滤波器谐振器的真实无载品质因素。进而对高阻硅基的毫米波工艺参数(例如,损耗角正切)进行修正,利用电磁仿真软件进行验证;分析了金属粗糙度对于滤波器损耗的影响。修正后的模型仿真结果和测试结果吻合较好,验证了修正后毫米波段高阻硅基参数的有效性,为芯片级毫米波无源器件的设计提供了支撑。

Study of Millimeter Wave IPD Filter on High Resistivity Silicon

There is an urgent demand of millimeter wave integrated passive device (IPD) with low cost, high performance in 5G communication. A fourth-order cross coupled millimeter wave microstrip filter on high resistivity silicon (HRS) is designed and fabricated. Based on the measured S parameter and theory of lossy coupling matrix, the real unloaded Q factor of the resonators can be extracted. The millimeter wave electric parameters of the HRS, such as loss angle tangent is amended, and electromagnetic simulator is used to verify the updated electric parameters. Influence of metal layer roughness on filter performance is also analyzed. Good agreements between simulated and measured S parameters of amended filter model verify the defectiveness of the revised electric parameters of the HRS. Meanwhile, this supports the design of other millimeter wave passive devices on chip.