| 基于毫米波GaN固态功放的预失真线性化器 |
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| 引用本文： | 张能波,李 凯.基于毫米波GaN固态功放的预失真线性化器[J].微波学报,2020,36(5):66-69. |
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| 作者姓名： | 张能波 李 凯 |
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| 作者单位： | 中国电子科技集团公司第十研究所,成都 610036 |
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| 摘 要： | 研制了一款用于毫米波GaN 固态功放的预失真线性化器。采用预失真线性化技术,通过调整I、Q 两路正交电路(I 路由线性可调衰减器构成,Q 路由二极管非线性电路构成)的外加偏置电压,可以实现预失真线性化器的幅度和相位分别可调。将该线性化器与工作频率为30 GHz 的毫米波GaN 固态功放级联测试,双音激励信号频率间隔为5 MHz,三阶互调(IMD3)可以改善约10 dB。
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| 关 键 词： | 毫米波 GaN 三阶互调 预失真 线性化器 |
Pre-distortion Linearizer for Millimeter-Wave GaN Solid State Power Amplifiers |
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| ZHANG Neng-bo,LI Kai.Pre-distortion Linearizer for Millimeter-Wave GaN Solid State Power Amplifiers[J].Journal of Microwaves,2020,36(5):66-69. |
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| Authors: | ZHANG Neng-bo LI Kai |
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| Affiliation: | The 10th Research Institute of China Electronics Technology Group Corporation, Chengdu 610036, China |
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| Abstract: | A predistortion linearizer for millimeter GaN solid state power amplifier is proposed in this paper. Using predistortion linearizer technology, through IQ orthogonal circuits, which the I routing is a linear adjustable attenuator, and the Q routing is diode nonlinear circuit,by adjusting the bias voltage of the IQ circuit, the gain and phase characteristics
can be adjusted respectively. By applying this linearizer to a 30 GHz-band GaN solid state power amplifier,and using a two-tone prompting signal with 5 MHz spacing, the improvement of three order intermodulation (IMD3) has been achieved 10 dB. |
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| Keywords: | millimeter-wave GaN three order intermodulation(IMD3) predistortion linearizer |
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