GaAs衬底共面波导S参数标准样片研制

GaAs等固态微波裸芯片电性能测试需要采用探针将共面波导参考面过渡到同轴参考面。设计制作了用于微波探针校准的GaAs衬底的计量级标准样片,包括SOLT 和TRL 校准模块,以及匹配传输线、衰减及驻波等验证模块。提出了平衡电桥结构,兼具衰减驻波标准,带内平坦,且工艺适应性好。经过与国外校准片比对,验证了频率覆盖100 MHz ~50 GHz,驻波比测量范围:1.1,1.5,2.5,5,10;衰减测量范围:-1 dB,-2 dB,-3 dB,-10 dB,-20 dB,-30 dB,-40 dB;匹配负载反射损耗小于-30 dB。同时提取了SOLT校准模块的矢网校准用参数。

Research on GaAs Co-planar Waveguide S Parameter Standard

For measuring solid-state microwave wafers such as GaAs, microwave probes are used to transform coplanar waveguide to coaxial reference plane. GaAs coplanar waveguide S-parameter standard for microwave calibration is discussed in this paper. The standard contains SOLT and TRL calibration module as well as matched transmission line, attenuation and VSWR verification cell. Balanced bridge structure is proposed in this paper, which can be due standards of VSWR and attenuation. Also, the in band characters are fine, and the artwork accommodation is also appropriate. After comparing with other calibration standards, the standard in this paper is demonstrated that the frequency covers 100 MHz ~50 GHz, VSWR covers 1.1,1.5,2.5,5,10, attenuation covers -1 dB,-2 dB,-3 dB,-10 dB,-20 dB,-30 dB,-40 dB, and the return loss of matched load is below -30 dB. Network analyzer calibration parameters are also extracted.