GaN功率器件应用可靠性增长研究

GaN功率器件是雷达T/R组件或发射功放组件中的核心元器件，随着器件的输出功率和功率密度越来越高，器件的长期可靠性成为瓶颈。文章对雷达脉冲工作条件下GaN功率器件的失效机理进行了分析和研究，指出高漏源过冲电压、栅源电压的稳定性以及GaN管芯的沟道温度的高低是影响GaN功率器件长期应用可靠性的主要因素，同时给出了降低漏源过冲电压、提高栅源电压稳定性以及改善GaN管芯的沟道温度的措施和方法。

Research on Work Reliability of GaN Power Devices

GaN power devices are core devices in radar T/ R modules or power amplifier modules. With the higher and higher demand on output power and power density of devices, long-term reliability becomes bottleneck gradually. In this paper, the failure mechanism of GaN power devices in radar pulse operation is analyzed and researched. High drain-source overshoot voltage, gate-source voltage stability and channel temperature of GaN transistor chip are main causes for influencing long-term work reliability of power devices. The methods of lowering the drain-source overshoot voltage, increasing the stability of gate-source voltage and improving channel temperature of GaN transistor chip are introduced.