基于CTIA的PV-HgCdTe线阵近红外激光响应特性

使用超连续谱激光辐照PV 型线阵HgCdTe 探测器，探测到了线阵器件输出信号随光照强度变化的全过程，发现了被辐照单元过饱和降压、低压稳定输出的反常响应规律；同时，未被辐照单元也存在响应。在总结实验响应规律的基础上，给出了各不同响应阶段功率阈值范围，并分别对辐照单元出现的过饱和降压、低压稳定输出等异常现象及未被辐照单元存在的整体降压反常响应现象进行了深入研究。研究认为采用CDS 相关双采样电路使器件的基底信号在强光下存在光响应是造成辐照单元异常响应的主要原因；而器件内部公共P 级结构、电路共用Vref 电压结构是导致未被辐照单元反常响应输出的主要因素。

Study on the light response characteristics of PV HgCdTe linear array detector with CTIA circuit

PV HgCdTe linear array detector was irradiated by supercontinuum laser light of various intensities. A series of photoresponsive output of HgCdTe detector under various laser intensities were shown. Some new phenomena of irradiated cell, supersaturation, low-voltage output were observed. The results were quite different from normal linear and saturated response. Besides, the nonirradiated units' output signal had responded. The range of threshold of various stages were given, on the basis of summarizing the responsive properties of HgCdTe detector. With further investigation, it is demonstrated that the paradoxical responded phenomenon of irradiated cell is primarily caused by the light response of the basal signal of the device's CDS circuit in bright light and the phenomenon of nonirradiated cell is primarily caused by the public P pole structure of linear array detector and the public Vref voltage structure of circuit.