用于光子计数的InGaAs/InP SPAD设计

重点研究了InGaAs/InP SPAD的隧道贯穿电场、雪崩击穿电场、雪崩宽度与过偏电压的关系,提出了过偏电压的计算方法.分析了InGaAs/InP SPAD的基本特性即探测效率、暗计数率与其过偏电压、工作温度、量子效率、电场分布的依赖关系,提出了一种单光子InGaAs雪崩二极管的设计方法.设计制作了InGaAs/InP SPAD,并在门控淬灭模式下进行了单光子探测实验.结果表明:对于200m的SPAD,在过偏2 V、温度-40 ℃条件下,探测效率(PDE) 20%(1 550 nm)、暗计数率(DCR)20 kHz;对于50m的SPAD,在过偏2.5 V、温度-40 ℃条件下,探测效率(PDE) 23%(1 550 nm)、暗计数率(DCR)2 kHz.最后对实验结果进行了分析和讨论.

Design and characterization of InGaAs/InP single-photon avalanche diodes for photon counting

The tunneling breakdown electric field, avalanche breakdown electric field, multiplication region width depend on exceed breakdown voltage of InGaAs/InP SPAD was researched as a key point. The calculated method of exceed breakdown voltage was presented. The basic performance of single photon avalanche diode(SPAD) depends on their excess bias, multiplication region width, working temperature, electric-field distribution and quantum efficiency has been analyzed. According to these analysis, a designed solution of InGaAs/InP SPAD has been presented, and then the device was manufactured later. Under the conditions of-40℃ and exceed breakdown voltage over 2 V, the InGaAs/InP SPAD of 200m diameter exhibits dark count rates(DCR) below 20 kHz and photon detection efficiency(PDE) of 20%(1 500 nm). Under the conditions of-40 ℃ and exceed breakdown voltage over 2.5 V, the InGaAs/InP SPAD of 50m diameter exhibits dark count rates(DCR)below 2 kHz and photon detection efficiency(PDE) of 23%(1 550 nm). Finally, the experimental results were analyzed.