高性能硅和铌酸锂异质集成薄膜电光调制器 （特邀）

硅基光子集成平台因其高集成度、CMOS工艺兼容性等特点在光通信领域受到了广泛的关注，而电光调制器作为光通信系统中最为重要的器件之一，承担着将电信号加载至光信号上的关键作用，为打破硅基调制器的性能限制，可利用硅和铌酸锂的大面积键合技术以及铌酸锂低损耗波导刻蚀技术实现高性能硅和铌酸锂异质集成薄膜电光调制器，目前该类调制器的性能可达半波电压3 V，3 dB电光带宽超过70 GHz，插入损耗小于1.8 dB, 消光比大于40 dB。文中对比了硅和铌酸锂异质集成调制器的研究现状并介绍了该异质集成薄膜调制器的结构设计与工艺实现方法。

High-performance thin-film electro-optical modulator based on heterogeneous silicon and lithium niobate platform (Invited)

Silicon photonic integration platform has attracted extensive attention in the field of optical communication due to its high integration and CMOS process compatibility. As one of the most important devices in optical communication system, electro-optic modulator plays a key role in loading electrical signals onto optical signals. To break the performance limitation of silicon-based modulator, the large-area bonding technology of silicon and lithium niobate and the low loss waveguide etching technology of lithium niobate can be used to achieve high-performance thin film electro-optic modulator based on heterogeneous silicon and lithium niobate platform. At present, this kind of modulator with the best performance exhibits a half-wave voltage of 3 V, a 3 dB electro-optical bandwidth of more than 70 GHz, an insertion loss of less than 1.8 dB, and an extinction ratio of more than 40 dB. In this paper, the research status of integrated modulator based on silicon and lithium niobate heterogeneous platform was compared and the structure design and fabrication process of the heterogeneous integrated thin-film modulator were introduced respectively.