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二维层状材料异质结光电探测器研究进展(特邀)
引用本文:陈红富,罗曼,沈倪明,徐腾飞,秦嘉怡,胡伟达,陈效双,余晨辉.二维层状材料异质结光电探测器研究进展(特邀)[J].红外与激光工程,2021,50(1):20211018-1-20211018-11.
作者姓名:陈红富  罗曼  沈倪明  徐腾飞  秦嘉怡  胡伟达  陈效双  余晨辉
作者单位:1.南通大学 信息科学技术学院 江苏省专用集成电路设计重点实验室,江苏 南通 226019
基金项目:国家自然科学基金(62074085);国家自然科学基金重大研究计划重点项目(91850208)
摘    要:自石墨烯时代以来,具有独特物理、化学和光电特性的二维层状材料(Two-Dimensional Layered Materials,2DLMs)得到了国内外科研人员的广泛关注。2DLMs因其种类的多样化与带隙的层数依赖性,光谱响应范围覆盖了紫外到红外辐射的极宽波段,具有应用于新一代光电探测器件的潜力。此外,2DLMs不受晶格匹配的限制,能以范德瓦尔斯力(Van der Waals,vdWs)与其他维度材料如体材料、纳米线和量子点等结合,制备得到性能独特且优异的复合结构器件。文中概述了几种应用在光电探测器领域的新型2DLMs异质结光电探测器的研究进展,主要包括基于二硒化钨(WSe2)、黑砷磷(AsP)、三硫化铌(NbS3)、二硒化钯(PbSe2)等异质结光电探测器,这些异质结光电探测器在异质结器件结构设计与新型二维半导体工艺技术应用方面做出了创新,在器件增益、结整流比、响应速度与波长探测范围等多个重要器件性能方面获得了突破性的研究成果。同时,文中还简要分析了这类器件研究当前所面临的挑战,并对其未来的发展方向进行了展望。

关 键 词:二维层状材料    异质结    光电探测器
收稿时间:2020-11-10

Research progress of two-dimensional layered materials-based heterojunction photodetectors(Invited)
Affiliation:1.Jiangsu Key Laboratory of ASIC Design, School of Information Science and Technology, Nantong University, Nantong 226019, China2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract:Since the era of graphene, two-dimensional layered materials (2DLMs) with distinctive physical, chemical and optoelectronic properties have attracted extensive attention from researchers worldwide. Benefiting from the diversity of material composition and the layer number dependence of their bandgap, the spectral response ranges of 2DLMs can cover an extremely wide band from ultraviolet to infrared radiation. Moreover, because of the lifting of the restriction on lattice matching, 2DLMs can be stacked with other dimensional materials, such as bulk materials, nanowires, and quantum dots, through van der Waals (vdWs) forces, creating unique and exclusive devices from integrated structures. This article reviewed the research progress of several typical 2DLMs heterojunction photodetectors with great potential application in the field of photodetection, focusing on the breakthrough results achieved in performance improvements such as device gain, junction rectification ratio, response time and detection wavelength coverage for devices based on tungsten diselenide (WSe2), arsenic phosphorus (AsP), niobium trisulfide (NbS3) and palladium diselenide (PbSe2), through innovations in heterostructure building and exploitation of 2D processing cutting-edge technology. Meanwhile, we had also briefly analyzed the current challenges confronted by these device researches, and tentatively forecasted its future development trend.
Keywords:
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