金属?无机半导体?金属光电探测器的研究进展

金属?半导体?金属光电探测器(MSM-PDs)本身固有的高速、高响应率、易集成等特性使其在光纤通信、传感、制导等多个领域受到广泛关注。文中围绕金属?无机半导体?金属光电探测器展开综述。首先介绍了MSM-PDs的基本结构，包含共面和垂直两种类型。紧接着，介绍了MSM-PDs具体的工作原理，除了常见的光电导型及肖特基型工作原理，还介绍了以金属作为吸光层的热载流子光电探测器的工作原理。随后，详细介绍了以GaAs、InGaAs、Si/Ge等无机材料作为半导体层的MSM-PDs在过去所取得的研究进展。此外，还介绍了利用金属微纳结构拓展较宽带隙半导体材料MSM-PDs在红外波段响应特性的研究进展。最后，总结全文并对MSM-PDs未来的发展做出了展望。

Research progress in metal-inorganic semiconductor-metal photodetectors

The metal-semiconductor-metal photodetectors (MSM-PDs) have received great attention in areas of optical fiber communication, sensing, missile guidance, etc., due to their inherent merits of high speed, high responsitivity, and easy integration. This review focused on MSM PDs with the semiconductor layer made of inorganic materials. Firstly, the basic structures of MSM-PDs was introduced, including the planar and vertical configurations. Then, the working principles of MSM-PDs were introduced. In addition to the common photoconductive and Schottky principles, the principle of hot carrier photodetectors with the metal layer as the light absorbing part was also introduced. Subsequently, the research progresses of MSM-PDs made of inorganic materials such as GaAs, InGaAs, Si/Ge was described in detail. Additionally, the research progress of using metallic micro/nano structures to extend the response of wide energy band semiconductor based MSM-PDs in infrared wavelength range was presented. Finally, the full text was summarized and the future development of MSM-PDs was prospected.