薄膜转移工艺制备的128×128规模高架桥式电阻阵

采用新的薄膜转移工艺,成功制备了128×128规模的高架桥式电阻阵。电阻阵的单元尺寸为50μm×50μm,占空比50%。初步测试了该高架桥电阻阵的两个基本指标,微桥的热时间常数和最高等效黑体温度,并对该电阻阵进行了成像实验。采用电学法测试单个微桥的时间常数τ约为4.5 ms,可在100Hz下工作。将整个面阵点亮,在8~12μm波段最高等效黑体温度达到250℃,推测在3~5μm波段最高等效黑体温度超过300±20℃。将整个器件全部点亮并驱动到最高温度时,器件的最大功率为30 W。该电阻阵可成功实现驱动显示成像。测试结果表明该高架桥式电阻阵初步满足红外景象产生器的要求。

128×128 resistor array with suspended micro-bridge fabricated through film transfer process

128×128 resistor array with suspended micro-bridge was fabricated through new film transfer process.Each cell was 50 μm×50 μm,with fill factor of 50%.Thermal time constant and maximum equivalent blackbody temperature of the micro-bridge were tested.Thermal time constant was measured of 4.5 ms through electrical method,which promised array work under 100 Hz frame rate.When all cells on the chip were driven to the highest temperature,the maximum equivalent blackbody temperature of the micro-bridge was 250 ℃ in 8-12 μm waveband,and the maximum equivalent balckbody temperature was speculated to be 300±20 ℃ in 3-5 μm waveband.When all cells on the chip were driven to the highest temperature,the highest power consumption of the array was 30 W.And the resistor array was successfully driven to generate different scale patterns.The preliminary test results show that the suspended micro-bridge resistor array can meet basic requirements of IR scene projector.