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半导体激光器输出波长随工作电流变化的实验研究
引用本文:李成仁,宋昌烈,李淑凤,姚文雄.半导体激光器输出波长随工作电流变化的实验研究[J].红外与激光工程,2003,32(2):144-147.
作者姓名:李成仁  宋昌烈  李淑凤  姚文雄
作者单位:1. 大连理工大学,物理系,辽宁,大连,116024;辽宁师范大学,物理系,辽宁,大连,116029
2. 大连理工大学,物理系,辽宁,大连,116024
基金项目:国家自然科学基金资助项目(69787001,69889701),及辽宁省科技厅资助项目(20022110)
摘    要:以2W连续红外(980nm)半导体激光器(InGaAs)和120mW连续红外(980nm,带制冷器与尾纤)半导体激光器(InGaAsP)为例,测量激光器输出光束的波长随工作电流变化的规律。实验结果表明:工作电流增加,光束波长向长波红移,斜率分别近似为0.374nm/100mA、0.220nm/10mA;工作电流大时的红移现象比电流小时明显。

关 键 词:半导体激光器  工作电流  波长  红移
文章编号:1007-2276(2003)02-0144-04
收稿时间:2002/7/25
修稿时间:2002年7月25日

Experimental investigation of the change of semiconductor laser output wavelength corresponding to operation current
LI Cheng\|ren\ \{,\},SONG Chang\|lie\ ,LI Shu\|feng\ ,YAO Wen\|xiong\.Experimental investigation of the change of semiconductor laser output wavelength corresponding to operation current[J].Infrared and Laser Engineering,2003,32(2):144-147.
Authors:LI Cheng\|ren\ \{  \}  SONG Chang\|lie\  LI Shu\|feng\  YAO Wen\|xiong\
Affiliation:LI Cheng\|ren\ \{1,2\},SONG Chang\|lie\ 2,LI Shu\|feng\ 2,YAO Wen\|xiong\ 2
Abstract:Two kinds of semiconductor lasers (InGaAs, 2 W, continuous output, infrared 980 nm and InGaAsP, 120 mW, continuous output, infrared 980nm, including tail\|fiber and cooler) are taken for examples and the rules of the change of semiconductor lasers output wavelength correspondig to operation current are experimentally investigated. The results show that the emission wavelength of the laser shifts in the direction of long wavelength as the operation current rises. The slopes are approximately 0.374 nm/100 mA and 0.220 nm/10 mA, respectively. Furthermore, the change of wavelength becomes more obvious while laser works in large current.
Keywords:Semiconductor laser  Operation current  Wavelength  Red shift
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