基于电容读出的非制冷红外探测器

介绍了一种基于标准硅工艺的电容读出式微悬臂梁非制冷红外探测器的设计、制作以及集成读出电路的设计。该探测器用于探测室温下物体的红外辐射，其响应波长为8～12 μm 。由于氮化硅和铝的热膨胀系数相差很大，用这两种材料的薄膜做成的双材料微悬臂梁在红外辐射下会发生弯曲，微悬臂梁和衬底形成一个可变电容，通过检测电容的变化来反映微悬臂梁的弯曲，从而可以探测红外辐射的情况。采用和探测器集成的CMOS读出电路对探测器信号进行读取，微悬臂梁的电容灵敏度可达2.5 fF/K，温度分辨率为0.1 K。

Uncooled infrared detector based on capacitive readout

The design and fabrication of a micro-cantilever uncooled infrared detector based on capacitor′s readout are introduced and the design of readout integrated circuits (ROIC) is also presented. The detector is micro-fabricated based on standard silicon IC technology. The detector is used to detect radiation of object at room temperature and its spectra sensitive range is from 8 to 12 μm. The films of silicon nitride (SiNx) and aluminum (Al) are used to make bi-material micro-cantilever. It will bend when temperature changes due to the infrared radiation, because SiNx and Al have different thermal expansion coefficients.The micro-cantilever and substrate form a micro-capacitor which capacity changes when IR radiation changes. The change signal of the micro-capacitor is read out by ROIC. The sensitivity of the micro-cantilever is 2.5 fF/K, its temperature resolution is 0.1 K.