红外探测器专用前置放大电路低温特性的研究

红外探测系统被广泛地应用于航空航天、军事、通信等领域。前置放大器低温性能的改善直接影响到整个系统探测精度的提高。从理论上分析了MOS器件低温性能参数的变化，设计了一种红外探测器处理电路专用的CMOS低功耗电流型前置放大器，并采用0.35 ?滋m标准CMOS工艺流片，进行了常温(300 K)和低温(77 K)测试。测试结果表明，该运放电路在低温工作时放大倍数线性度良好，功耗等性能得到改善；但是带宽、失调、输入线性范围等性能下降。针对实验结果给出了初步理论分析。

Cryogenic characteristics of the infrared detector specific pre-amplifier

Infrared detector systems have been widely applied in the field of space, military and communication. Progresses of the pre-amplifier can result in the improvement of resolution of the whole systems. In this paper, characteristic parameters of MOS device at low temperature are theoretically analyzed. A specific CMOS op-amp is designed, manufactured with 0.35 μm standard CMOS technology and is tested at RT (300 K) and cryogenic temperature（77 K）. The test results demonstrate that at cryogenic temperature, linearity of the gain coefficient was excellent and performances such as the static power consumption were improved. But other factors such as the offset voltage, bandwidth and the input linear range were decreased. According to the experimental results, a preliminary analysis is given.