蝶形天线增强的InP基室温HEMT太赫兹探测器研究

采用分子束外延技术制备了InP基HEMT样片，室温下样片迁移率达10 289 cm2/（Vs）。通过光刻、腐蚀、磁控溅射、点焊等工艺技术制备出了蝶形天线耦合的太赫兹探测器件。器件采用的蝶形天线经HFSS软件仿真优化后，天线S11参数为-40 dB，电压驻波比（VSWR）为1.15，增益可达6 dB，并与二维电子气沟道实现阻抗匹配。在VDI公司0.3 THz肖特基二极管太赫兹源辐照下进行器件测试，测试结果表明，室温下器件噪声等效功率（NEP）为40 nW/Hz1/2，探测响应度46 V/W，器件响应时间优于330 s。

Research on InP-based HEMT terahertz detector enhanced by bow-tie antenna at room temperature

InP-based HEMT samples were prepared by molecular beam epitaxy(MBE). The sample mobility at room temperature reached 10 289 cm2/(Vs). The terahertz detector coupled with a bow-tie antenna was fabricated by photolithography, etching, magnetron sputtering, spot welding. The bow-tie antenna used in the device was optimized by simulation with HFSS, so that the optimized antenna parameter of S11 was -40 dB, the voltage standing wave ratio(VSWR) was 1.15, gain was 6 dB and impedance matching with the two-dimensional electronic gas(2DEG) channel. The device was measured by VDI's 0.3 THz Schottky diode terahertz source. The measurement results show that the device noise equivalent power (NEP) is 4 nW/Hz1/2 at room temperature, and the detection response rate is 46 V/W, the device response time is better than 330 s.