二极管非制冷红外探测器及其读出电路设计

针对非制冷红外技术的低成本高性能应用，提出了基于SOI的二极管红外探测器及其读出电路的集成设计方案。阐述了二极管非制冷红外探测器的基本原理和工艺实现。对探测器的电学特性进行理论推导，得出读出电路的设计指标。采用连续时间自稳零电路结构实现探测器输出信号的低噪声低失调放大，采用级联滤波器以减弱开关非理想因素的影响，并采用片内电容采样保持，使得I/O引脚数较少，从而减小版图面积。采用spectre工具进行仿真，在CSMC 0.5 m 2P3M CMOS工艺下实现。结果表明:读出电路性能良好，闭环增益为65.8 dB，等效输入噪声谱密度为450 nV/Hz，等效输入失调电压100 V以内，功耗为5 mW，能实现探测器信号的准确读出。

Uncooled diode infrared detector and design of its readout interface circuit

A design for integration of diode infrared detectors based on SOI and its readout interface circuit was presented for the low cost and high performance applications of uncooled infrared technology. Basic principle and fabrication technology of uncooled diode infrared detectors were elaborated. Through theoretical derivation of the electrical characteristics of detectors, circuit design specifications were given. The circuit used continuous time auto-zero technique to reduce offset voltage and suppress low frequency noise. It amplified the signals and cascaded a filter to decrease effects of non-ideal switches. Capacitors in chip were chosen to sample and hold, and as a result, the layout of the circuit had fewer I/O pads and smaller area. It was simulated using spectre tool and fabricated in CSMC 0.5 m 2P3M CMOS process. Experimental results show that this circuit has a good performance, achieving a closed-loop gain of 65.8 dB, equivalent input noise power spectral density of 450 nV/Hz, equivalent input offset voltage smaller than 100 V and power consumption of 5 mW, can accurately read out the outputs of detectors.