高功率980nm非对称宽波导半导体激光器设计 |
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引用本文: | 徐正文,曲轶,王钰智,高婷,王鑫.高功率980nm非对称宽波导半导体激光器设计[J].红外与激光工程,2014,43(4):1094-1098. |
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作者姓名: | 徐正文 曲轶 王钰智 高婷 王鑫 |
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作者单位: | 1.长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 |
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基金项目: | 吉林省科技发展计划(20111810) |
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摘 要: | 设计了980nm非对称宽波导InGaAs/InGaAsP量子阱激光器,并在结构中插入电流阻挡层,有效地阻止载流子的泄露。用LASTIP软件对980nm非对称宽波导量子阱激光器进行理论模拟,与传统的980nm对称宽波导量子阱激光器相比,非对称宽波导量子阱激光器波导和量子阱之间有更小的能带差,非对称宽波导结构具有更低的阈值电流,更高的斜效率以及更低的阻抗,所以带有电流阻挡层的980nm非对称宽波导InGaAs/InGaAsP量子阱激光器有更高的光电转换效率和输出功率。
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关 键 词: | 非对称宽波导 激光器 高功率 电流阻挡层 |
收稿时间: | 2013-08-21 |
Simulation analysis of high power asymmetric 980 nm broad-waveguide diode lasers |
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Affiliation: | 1.National Key Laboratory on High Power Semiconductor Laser of Changchun University of Science and Technology,Changchun 130022,China |
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Abstract: | The design of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer was designed for high-power, which prevents carrier leakage and increases electro-optical conversion efficiency. The properties of the 980 nm asymmetric waveguide quantum well structure lasers were numerically studied with a commercial LASTIP simulation program. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. The simulation results show that the asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure, so laser performance of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer has higher electro-optical conversion efficiency and laser output power. |
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