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Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWs |
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| Authors: | J Miguel-Snchez A Guzmn U Jahn E Luna E Muoz |
| Affiliation: | aISOM: Institute for Systems Based on Optoelectronics and Microtechnology and Departamento de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid. Ciudad Universitaria s/n 28040, Madrid, Spain bPaul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany |
| Abstract: | The structural characterization of hole patterns on GaAs cap layers grown on GaInNAs quantum wells (QWs) created by rapid thermal annealing is shown in this work. The effect of annealing temperature on the hole size, as well as the impact of the ion density present during the growth of the QW on the formation of this hole pattern, is presented. Structural (atomic force, scanning electron and transmission electron microscopy) and optical characterization (cathodoluminescence) of the samples is presented. The structure of the planes forming the walls and base of these holes is proposed. |
| Keywords: | Rapid thermal annealing GaAs Patterning Diluted nitrides |
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