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A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs |
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| Authors: | P Suveetha Dhanaselvam NB Balamurugan VN Ramakrishnan |
| Affiliation: | 1. Department of Electronics and Communication Engineering, Velammal College of Engineering and Technology, Madurai, Tamilnadu, India;2. Department of Electronics and Communication Engineering, Thiagarajar College Of Engineering, Madurai, Tamilnadu, India;3. School of Electronics Engineering, VIT University, Vellore, Tamilnadu, India |
| Abstract: | A 2D analytical model for transconductance, Sub-threshold current and Sub-threshold swing for Triple Material Surrounding Gate MOSFET (TMSG) is presented in this paper. Based on the solution of two dimensional Poisson equation, the physics based model of sub-threshold current of the device is derived. The model also includes the effect of gate oxide thickness and silicon thickness on the sub-threshold swing characteristics. Transconductance to drain current ratio of the triple material surrounding gate is calculated since it is a better criterion to access the performance of the device. The effectiveness of TMSG design was scrutinized by comparing with other triple material and dual material gate structures. Moreover the effect of technology parameter variations is also studied and proposed. This proposed model offers basic guidance for design of TMSG MOSFETs. The results of the analytical model are compared with the MEDICI simulation results thus providing validity of the proposed model. |
| Keywords: | Triple material Surrounding Gate (TMSG) MOSFETs Transconductance to drain current ratio Sub-threshold current Sub-threshold swing |
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