Enhanced Light Output in Roughened GaN-Based Light-Emitting Diodes Using Electrodeless Photoelectrochemical Etching |
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| Authors: | Hsu S-C Lee C-Y Hwang J-M Su J-Y Wuu D-S Horng R-H |
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| Affiliation: | Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung; |
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| Abstract: | We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0deg which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED |
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