| GaInAs/GaAs应变量子阱能带结构的计算 |
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| 引用本文： | 晏长岭,秦莉,宁永强,张淑敏,王青,赵路民,刘云,王立军,钟景昌.GaInAs/GaAs应变量子阱能带结构的计算[J].四川激光,2004,25(5):29-31. |
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| 作者姓名： | 晏长岭 秦莉 宁永强 张淑敏 王青 赵路民 刘云 王立军 钟景昌 |
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| 作者单位： | 长春理工大学高功率半导体激光国家重点实验室，中国科学院激发态开放重点实验室，中国科学院激发态开放重点实验室，吉林大学，中国科学院激发态开放重点实验室，中国科学院激发态开放重点实验室，中国科学院激发态开放重点实验室，中国科学院激发态开放重点实验室，长春理工大学高功率半导体激光国家重点实验室 长春130022中国科学院激发态开放重点实验室，中国科学院长春光学精密机械与物理研究所，长春130021，中国科学院长春光学精密机械与物理研究所，长春130021，中国科学院长春光学精密机械与物理研究所，长春130021，长春130023，中国科学院长春光学精密机械与物理研究所，长春130021，中国科学院长春光学精密机械与物理研究所，长春130021，中国科学院长春光学精密机械与物理研究所，长春130021，中国科学院长春光学精密机械与物理研究所，长春130021，长春130022 |
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| 基金项目： | 国家自然基金资助项目 ( 60 3 0 60 0 4) |
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| 摘 要： | 讨论了GaInAs/GaAs应变量子阱结构的应变效应 ,给出了量子阱层的临界厚度随In组份的变化关系。由克龙尼克 -潘纳模型计算了GaInAs/GaAs应变量子阱的量子化能级 ,给出了cl -hhl跃迁对应的发射波长随阱宽和In组份的变化关系曲线 ,并与实验测量的GaInAs/GaAs量子阱的发射波长进行了比较 ,基本一致。与此同时 ,对GaInAs/GaAs应变量子阱向长波长方向的发展也进行了计算分析 ,最后计算研究了应变量子阱中价带子能级及态密度的色散关系
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| 关 键 词： | 应变量子阱 量子化能级 跃迁 长波长 色散关系 |
| 文章编号： | 0253-2743(2004)05-0029-03 |
| 修稿时间： | 2004年1月1日 |
Calculation of energy band structure of GaInAs/GaAs guantum well |
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| YAN Chang-ling ,QIN Li ,NING Yong-qiang ,ZHANG Shu-ming ,WANG Qing ,ZHAO Lu-min ,LIU Yun ,WANG Li-jun ,ZHONG Jing-chang .State Key Lab.of High Power Semiconductor Laser,Changchun University of Scince and Technology,Changchun ,China, .Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics,and Physics,Chinese Academy of Science,Changchun ,China, .Jilin University,Changchun ,China.Calculation of energy band structure of GaInAs/GaAs guantum well[J].Laser Journal,2004,25(5):29-31. |
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| Authors: | YAN Chang-ling QIN Li NING Yong-qiang ZHANG Shu-ming WANG Qing ZHAO Lu-min LIU Yun WANG Li-jun ZHONG Jing-chang State Key Labof High Power Semiconductor Laser Changchun University of Scince and Technology Changchun China Laboratory of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Science Changchun China Jilin University Changchun China |
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| Affiliation: | YAN Chang-ling 1,2,QIN Li 2,NING Yong-qiang 2,ZHANG Shu-ming 3,WANG Qing 2,ZHAO Lu-min 2,LIU Yun 2,WANG Li-jun 2,ZHONG Jing-chang 1 1.State Key Lab.of High Power Semiconductor Laser,Changchun University of Scince and Technology,Changchun 130022,China, 2.Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics,and Physics,Chinese Academy of Science,Changchun 130021,China, 3.Jilin University,Changchun 130023,China |
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| Abstract: | The strain effect of GaInAs/GaAs quantum well is discussed,and the critical layer thickness of the quantum well under different indium fractions is obtained.Then by using Kronig-Penney model,the conduction band and valence band energy levels in GaInAs/GaAs quantum wells are calculated,and the emitting wavelength for the cl-hhl transition energy is also given in the paper.Comparing the calculation results to the GaInAs/GaAs quantum well experimental results,it is normally the same.At the same time,the trend of highly strained GaInAs/GaAs quantum wells for long wavelength is also considered.Finally,by using the Luttinger-Kohn Hamitonian the valence band dispersion curves and the density of states of the strained quantum wells are studied theoretically. |
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| Keywords: | strained quantum wells quantum energy levels transition long wavelength dispersion |
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