Fabrication and characterization of 1 550 nm polarization-insensitive semiconductor optical amplifiers |
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摘 要: | Semiconductor Optical Amplifiers (SOAs) can beused asin-line amplifier ,preamplifier ,optical switch,andwavelength converter in future optical systems1-3].Po-larization-independent gain,high output power and lowgain ripple are desirable features for most…
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关 键 词: | 半导体 光学放大器 偏振 电子束传播 |
文章编号: | 1673-1905(2006)05-0351-03 |
收稿时间: | 2006-05-17 |
Fabrication and characterization of 1 550 nm polarization-insensitive semiconductor optical amplifiers |
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Authors: | Yong-hong Hu Yong-zhen Huang Li-juan Yu Qin Chen Man-qing Tan and Xiao-yu Ma |
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Affiliation: | (1) State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China |
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Abstract: | A 1550 nm polarization-insensitive semiconductor optical amplifier (SOA) was fabricated with InGaAs tensile-strained bulk
active region. Beam propagation method and planar wave expansion method are used to calculate the mode field profile and the
mode reflectivity. For the SOA with a buried waveguide deviated 70 from the normal direction of cleaved mirrors, the thickness tolerance of the mirror is 3% for keeping the reflectivity of
TE mode and TM mode less than 10−4 simultaneously. For a SOA with a cavity length of 800 μm, the polarization sensitivity of amplified spontaneous emission
spectra is less than 0.5 dB at an injection current of 250 mA, the corresponding fiber-to-fiber gain is 11.9 dB at 1550 nm
with a 3 dB bandwidth of 63 nm, and the saturation output power is 5.6 dBm. The noise figure shows 8.8 and 7.8 dB at 1550
and 1570 nm, respectively. For a packaged SOA with a cavity length of 1000 μm, the fiber-to-fiber gain is 15 dB at an injection
current of 190 mA. |
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Keywords: | CLC number" target="_blank">CLC number TN365 |
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