| 高Al组分In1-xAlx Sb/InSb的MBE生长研究 |
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| 引用本文： | 尚林涛,刘铭,周朋,邢伟荣,沈宝玉.高Al组分In1-xAlx Sb/InSb的MBE生长研究[J].激光与红外,2016,46(8):976-979. |
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| 作者姓名： | 尚林涛 刘铭 周朋 邢伟荣 沈宝玉 |
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| 作者单位： | 华北光电技术研究所,北京 100015 |
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| 摘 要： | 高Al(10%~15%)组分的In1-xAlx Sb层可作为势垒层以抑制隧穿暗电流、提高器件工作温度而显得很重要。采用分子束外延的方法对InSb(100)衬底高Al组分的In1-xAlx Sb/InSb外延生长进行了实验探索,确定出了Al组分(约12.5%)并讨论了Al组分梯度递变的In1-xAlx Sb缓冲层和生长温度对外延薄膜质量的影响。
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| 关 键 词： | InSb(100) 高铝 InAlSb 薄膜生长 |
Research on In1-xAlx Sb/InSb films with high Al composition growth by MBE |
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| SHANG Lin-tao,LIU Ming,ZHOU Peng,XING Wei-rong,SHEN Bao-yu.Research on In1-xAlx Sb/InSb films with high Al composition growth by MBE[J].Laser & Infrared,2016,46(8):976-979. |
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| Authors: | SHANG Lin-tao LIU Ming ZHOU Peng XING Wei-rong SHEN Bao-yu |
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| Affiliation: | North China Research Institute of Electro-optics,Beijing 100015,China |
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| Abstract: | Because high-aluminium (about 10% to 15%)In1-xAlx Sb as barrier layer can inhibit the tunneling dark current and improve the working temperature of the device,it has a certain research value.The growth of the high-aluminium component In1-xAlx Sb/InSb film on InSb(100)substrate is studied by molecular beam epitaxial (MBE)method.The variation curve of Al components with Al source beam was obtained,and the aluminium component of about 12.5 percent was decided.The influence of graded aluminium component In1-xAlx Sb buffer layer and the growth temperature on the epitaxial thin film quality was discussed and analyzed. |
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| Keywords: | InSb (100) high Aluminium InAlSb film growth |
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