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InAs/GaSb II型超晶格红外探测器的研究进展
引用本文:宋淑芳,巩锋,周立庆.InAs/GaSb II型超晶格红外探测器的研究进展[J].激光与红外,2014,44(2):117-121.
作者姓名:宋淑芳  巩锋  周立庆
作者单位:华北光电技术研究所,北京 100015
摘    要:InAs/GaSb Ⅱ型超晶格材料理论上性能优于HgCdTe、InSb等红外探测材料,基于成熟的Ⅲ-V族化合物材料与器件工艺,使得Ⅱ型超晶格材料容易满足均匀大面阵、双色或多色集成等红外探测器的要求,因而InAs/GaSb Ⅱ型超晶格材料将逐步替代HgCdTe、InSb等材料成为第三代红外探测器的首选材料。本文阐述了InAs/GaSb超晶格红外探测器的基本原理、以及材料生长和器件结构,并对其研究进展进行了综述性介绍。

关 键 词:Ⅱ类超晶格  红外材料  红外探测器

Research progress of InAs/GaSb type II super-lattice infrared detector
SONG Shu-fang,GONG Feng,ZHOU Li-qing.Research progress of InAs/GaSb type II super-lattice infrared detector[J].Laser & Infrared,2014,44(2):117-121.
Authors:SONG Shu-fang  GONG Feng  ZHOU Li-qing
Affiliation:North China Research Institute of Electro-optics,Beijing 100015,China
Abstract:InAs/GaSb type II super-lattice is a novel infrared material with the theoretical promise of better performance than MCT and InSb. In view of the maturity of III-V compound materials growth and device technology,it is easy to obtain InAs/GaSb type II super-lattice material for uniform large formats and dual/multiple color infrared detectors. At present,InAs/GaSb type II super-lattice material is regarded as a primary material for the third generation infrared detectors,which may gradually replace MCT and InSb. The basic theory,the research on materials growth and device structure of InAs/GaSb type II super-lattice infrared detector are presented. Research progress of InAs/GaSb type II super-lattice infrared detector is summarized.
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