| InSb分子束外延原位掺杂技术研究 |
| |
| 引用本文： | 刘铭,邢伟荣,尚林涛,周朋,程鹏.InSb分子束外延原位掺杂技术研究[J].激光与红外,2015,45(7):817-820. |
| |
| 作者姓名： | 刘铭 邢伟荣 尚林涛 周朋 程鹏 |
| |
| 作者单位： | 华北光电技术研究所,北京,100015 |
| |
| 摘 要： | 对InSb分子束外延薄膜的本征掺杂、N型掺杂以及P型掺杂进行了研究，其中分别以Be作P 型以及以Si、Te作N 型的掺杂剂。实验采用半绝缘的GaAs衬底作为InSb分子束外延用衬底，通过采用低温生长缓冲层技术降低大失配应力，获得高质量InSb外延膜。实验样品采用霍尔测试以及SIMS测试掺杂浓度和迁移率分析掺杂规律、掺杂元素偏聚和激活规律的影响因素。
|
| 关 键 词： | 分子束外延 N型掺杂 P型掺杂 本征掺杂 |
In-situ doping technology research of InSb film growth by molecular beam epitaxy |
| |
| LIU Ming,XING Wei-rong,SHANG Lin-tao,ZHOU Peng,CHEN Peng.In-situ doping technology research of InSb film growth by molecular beam epitaxy[J].Laser & Infrared,2015,45(7):817-820. |
| |
| Authors: | LIU Ming XING Wei-rong SHANG Lin-tao ZHOU Peng CHEN Peng |
| |
| Affiliation: | North China Research Institute of Electro-optics,Beijing 100015,China |
| |
| Abstract: | In this paper,the intrinsic doping,n-type doping and p-type doping technology of the InSb film growth by molecular beam epitaxy are studied.Be is used as the p-type doping element and Te,Si are used as the n-type doping element.Semi insulating GaAs is used as the substrate of InSb layer growth by molecular beam epitaxy.Buffer layer growth under low temperature can reduce the large mismatch stress,and high quality InSb films can be obtained.The doped concentration and migration rate of the experimental samples were measured by Hall and SIMS,and the influence factors of doping rules,doping element segregation and activate rules are analyzed. |
| |
| Keywords: | molecular beam epitaxy n-type doping p-type doping intrinsic doping |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《激光与红外》浏览原始摘要信息 |
|
点击此处可从《激光与红外》下载全文 |
|
