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Kink效应对低温CMOS读出电路的影响
引用本文:刘文永,冯琪,丁瑞军.Kink效应对低温CMOS读出电路的影响[J].激光与红外,2007,37(13):990-992.
作者姓名:刘文永  冯琪  丁瑞军
作者单位:中国科学院上海技术物理研究所,上海 200083;中国科学院研究生院,北京 100039
摘    要:在深低温下(T<50K),CMOS器件会出现Kink效应,即I-V特性曲线会发生扭曲。当漏源电压较大时(Vds>4V),漏电流突然加大,电流曲线偏离正常的平方关系。本文通过实验表明,Kink效应对CMOS读出电路中的一些电路结构产生较严重的影响,Kink效应会导致源跟随器输出产生严重的非线性;对于共源放大器和两级运放,Kink效应会使其增益产生非线性。最后,针对影响低温读出电路性能的Kink效应进行分析和研究,提出在低温CMOS读出集成电路设计中如何解决这些问题的方案。

关 键 词:Kink效应  CMOS读出电路  低温  非线性  宏模型

Impact of Kink Effect on CMOS Readout Circuits for Cryogenic Operation
LIU Wen-yong,FENG Qi,DING Rui-jun.Impact of Kink Effect on CMOS Readout Circuits for Cryogenic Operation[J].Laser & Infrared,2007,37(13):990-992.
Authors:LIU Wen-yong  FENG Qi  DING Rui-jun
Affiliation:Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; Graduate School of the Chinese Academy of Sciences, Beijing 100039, China
Abstract:The Kink phenomenon presented in the I-V output characteristics of CMOS devices at low temperature (T<50K) is studied. The impact of Kink effect on CMOS readout integrated circuits for cryogenic operation is examined. The output characteristic of source follower, the gain characteristic of common-source amplifier and two-stage amplifier all exhibit severe nonlinearity resulted from the Kink effect. Based on the analysis of Kink effect problems, several solutions are proposed for the design of CMOS readout integrated circuit operated at low temperature. The improvement is verified through the simulation.
Keywords:Kink effect  CMOS readout circuits  low temperature  nonlinearity  macro model
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