| CdZnTe(211)B衬底对MBE外延碲镉汞材料的影响分析 |
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| 引用本文： | 吴亮亮,侯晓敏,王丛,王经纬,刘铭,周立庆.CdZnTe(211)B衬底对MBE外延碲镉汞材料的影响分析[J].激光与红外,2015,45(6):650-655. |
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| 作者姓名： | 吴亮亮 侯晓敏 王丛 王经纬 刘铭 周立庆 |
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| 作者单位： | 华北光电技术研究所,北京,100015 |
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| 摘 要： | 碲锌镉 CdZnTe（211）B 衬底广泛应用于碲镉汞（HgCdTe）分子束外延生长，其性能参数在很大程度上决定了碲镉汞分子束外延材料的质量。主要讨论了 CdZnTe（211）B 衬底几个关键性能参数对碲镉汞外延材料的影响，包括 Zn 组分及均匀性、缺陷（位错、孪晶及晶界和碲沉淀）以及表面状态（粗糙度和化学组成），并且分析了对 CdZnTe（211）B 衬底进行筛分时各性能参数的评价方法和指标。
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| 关 键 词： | 碲锌镉 碲镉汞 分子束外延 表面状态 筛分 |
Analysis on the influence of CZT(211)B substrate on HgCdTe grown by MBE |
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| WU Liang liang,HOU Xiao min,WANG Cong,WANG Jing wei,LIU Ming,ZHOU Li qing.Analysis on the influence of CZT(211)B substrate on HgCdTe grown by MBE[J].Laser & Infrared,2015,45(6):650-655. |
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| Authors: | WU Liang liang HOU Xiao min WANG Cong WANG Jing wei LIU Ming ZHOU Li qing |
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| Affiliation: | North China Research Institute of Electro optic,Beijing 100015,China |
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| Abstract: | CdZnTe(211)B substrate is widely used for the growth of mercury cadmium telluride(HgCdTe) by molecular beam epitaxy,and the quality of HgCdTe grown by MBE depend strongly on the performance of the substrates.The effect of several key parameters of CdZnTe(211)B substrate on the HgCdTe epitaxial materials is discussed,including Zn composition and uniformity,defects(dislocation,grain boundary and Te precipitates) and surface condition(roughness and chemical composition).And the characterization methods and indexes of the parameters are analyzed when CdZnTe(211)B substrates are screened. |
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| Keywords: | CdZnTe HgCdTe molecular beam epitaxy surface condition screening |
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