Si基短波碲镉汞材料分子束外延生长研究

报道了在中波工艺基础上，Si 基碲镉汞分子束外延短波工艺的最新研究进展，通过温度标定、使用反射式高能电子衍射、高温计的在线测量和现有的中波 Si 基碲镉汞温度控制曲线建立及优化了 Si 基碲镉汞短波材料的生长温度控制曲线；获得的 Si 基短波 HgCdTe 材料表面光亮、均匀，表面缺陷密度小于3000 cm －2；基于此技术成功制备出了 Si 基短／中波双色材料。

Research on short wavelength HgCdTe film growth on silicon composite substrate by molecular beam epitaxy growth

Based on the fabrication technology of MW HgCdTe,the recent research progress on molecular beam epitaxy growth of SW HgCdTe on Si composite substrate is reported.Through the original temperature calibration,the use of in situ measurements such as RHEED and pyrometry,the temperature controlling figure profile of MW MCT,a customized temperature controlling figure profile for SW MCT was built and optimized.The defects density of optimized Si based SW HgCdTe is less than 3000 cm-2 and the surface is smooth and uniform.SW/MW dual band HgCdTe has been also fabricated based on this technology.